small signal product - fast switching device (t rr < 4.0 ns) - through-hole mount device type - do-34 package (jedec do-204) - hermetically sealed glass - compression bonded construction - rohs compliant - solder hot dip tin (sn) lead finish - cathode indicated by polarity band - marking code: 133 symbol unit p d mw w iv v i o ma i fm ma i fsurge a t j o c t stg o c symbol unit b v v v f v i r na c j pf t rr ns document number: ds_s1403003 version: c15 and leads are readily solderable do-34 1ss133m taiwan semiconductor 300mw, hermetically sealed glass switching diodes features - all external surfaces are corrosion resistant 4.0 parameter 500 breakdown voltage 1.2 forward voltage reverse leakage current junction capacitance reverse recovery time 80 -- -- -- 4.0 i r =500na i f =100ma v r =80v v r =0, f=1.0mhz (note 1) operating junction temperature notes: 1. reverse recovery test conditions: i f =i r =10ma, r l =100 ? , i rr =1ma 2 450 min max peak forward surge current 90 150 storage temperature range 300 + 175 value -65 to +200 maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter power dissipation working inverse voltage average rectified current non-repetitive peak forward current
small signal product ratings and characteristics curves (t a =25c unless otherwise noted) document number: ds_s1403003 version: c15 1ss133m taiwan semiconductor 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 capacitance between terminals : c t (pf) reverse voltage : v r (v) f = 1 mhz fig. 3 capacitance between te rminals characteristics 0 1 2 3 4 5 048121620 reverse recovery time : tr (ns) forward current : i f (ma) fig. 4 reverse recovery time characteristics 1 10 100 0.1 1 10 100 1000 10000 surge current : i surge (a) pulse width : tw (ms) fig. 5 surge current characteristics 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 forward current : i f (ma) forward voltage : v f (v) fig. 1 forward characteristics t a =125 o c t a =75 o c t a =25 o c t a =-25 o c 1 10 100 1000 10000 0 20406080100120 reverse current : i r (na) reverse voltage : v r (v) fig. 2 reverse characteristics t a =25 o c t a =100 o c t a =75 o c t a =50 o c v r = 6 v i rr = 1/10 i r fig. 6 reverse recovery time ( trr ) measurement circuit
min max min max a 0.30 0.55 0.012 0.022 b 2.16 3.04 0.085 0.120 c 25.40 38.10 1.000 1.500 d 1.27 2.00 0.050 0.079 document number: ds_s1403003 version: c15 dim. unit(mm) unit(inch) 1ss133m taiwan semiconductor small signal product order information (example) package outline dimensions 1ss133m r0g green compound ? code packing ? code part ? no.
small signal product assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_s1403003 version: c15 1ss133m taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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